WebPhilips Semiconductors Product specification N-channel TrenchMOS transistor IRF630, IRF630S FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 9 AgRDS (ON) 400 msGENERAL DESCRIPTIONN-channel, enhancement mode field-effect power transistor … IRF634A Product details. FEATURES. ♦ Avalanche Rugged Technology. ♦ Rugged Gate Oxide Technology. ♦ Lower Input Capacitance. ♦ Improved Gate Charge. ♦ Extended Safe Operating Area. ♦ Lower Leakage Current: 10µA (Max.) @ VDS= 250V.
IRF634A Original Pulled IR 250V 8.1A .45Ω N-CHANNEL HEXFET …
WebIRF634A FEATURES BVDSS = 250 V Avalanche Rugged Technology Rugged Gate Oxide Technology RDS (on) = 0.45 Lower Input Capacitance Improved Gate Charge ID = 8.1 A Extended Safe Operating Area Lower Leakage Current: 10A (Max.) @ VDS = 250V TO-220 Lower RDS (ON): 0.327 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings … WebMar 15, 1999 · onsemi's IRF634A is trans mosfet n-ch 250v 8.1a 3-pin(3+tab) to-220 in the fet transistors, mosfets category. Check part details, parametric & specs and download … optima 7 lighting
250V N-channel B-FET / Substitute of IRF634 IRF634A - DigChip
WebIRFS634A Datasheet Advanced Power MOSEFT - Samsung semiconductor isc N-Channel MOSFET Transistor, Inchange Semiconductor Company Limited WebIRF634A. 281Kb / 2P. isc N-Channel MOSFET Transistor. Search Partnumber : Start with "IRF634 A " - Total : 30 ( 1/2 Page) Fairchild Semiconductor. IRF634 B. 859Kb / 10P. 250V … optima 6 volt red top battery